The EGaIn technique

We use a method to contact SAMs electrically safely: the metal surface on which the SAMs are formed serves as the bottom-electrode and the SAM is contacted with a eutectic alloy of Gallium and Indium (EGaIn) that has a thin, highly conductive surface layer of conductive GaOx of 0.7 nm); this alloy is non-toxic and has non-Newtonian properties so it can be shaped and forms stable features in microchannels (unlike Hg for instance).

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