5. Bias Induced Transition from an Ohmic to a Non-Ohmic Interface in Supramolecular Tunneling Junctions with Ga2O3/EGaIn Top Electr<br>Wimbush, K. S.; Fratila, R. M.; Wang, D. D.; Qi, D. C.; Cao, L.; Yuan, L.; Yakovlev, N.; Loh. K. P.; Reinhoudt, D. N.; V-Department of Chemistry, Tsinghua University

5. Bias Induced Transition from an Ohmic to a Non-Ohmic Interface in Supramolecular Tunneling Junctions with Ga2O3/EGaIn Top Electr Wimbush, K. S.; Fratila, R. M.; Wang, D. D.; Qi, D. C.; Cao, L.; Yuan, L.; Yakovlev, N.; Loh. K. P.; Reinhoudt, D. N.; V
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Wimbush, K. S.; Fratila, R. M.; Wang, D. D.; Qi, D. C.; Cao, L.; Yuan, L.; Yakovlev, N.; Loh. K. P.; Reinhoudt, D. N.; Velders, A. H.; Nijhuis, C. A. , Nanoscale 2014, 19, 11246-11258.
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