12. Tuning the Tunneling Rate and Dielectric Response of SAM-Based Junctions via a Single Polarizable Atom<br>Wang, D.; Fracasso, D.; Nurbawono, A.; Annadata, H. V.; Suchand Sangeeth, C. S.; Yuan, L.; Nijhuis, C. A. , Adv. Mater. 2015, 27, 6689-6695.-Department of Chemistry, Tsinghua University

12. Tuning the Tunneling Rate and Dielectric Response of SAM-Based Junctions via a Single Polarizable Atom Wang, D.; Fracasso, D.; Nurbawono, A.; Annadata, H. V.; Suchand Sangeeth, C. S.; Yuan, L.; Nijhuis, C. A. , Adv. Mater. 2015, 27, 6689-6695.
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Wang, D.; Fracasso, D.; Nurbawono, A.; Annadata, H. V.; Suchand Sangeeth, C. S.; Yuan, L.; Nijhuis, C. A. , Adv. Mater. 2015, 27, 6689-6695.
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